carrier lifetime
英 [ˈkæriə(r) ˈlaɪftaɪm]
美 [ˈkæriər ˈlaɪftaɪm]
载流子寿命
双语例句
- An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.
我们又进一步研究了退火对少数载流子寿命和表面复合速率的影响，因为其对太阳能电池的最终效率影响很大。 - Panel of minority carrier lifetime tester is as follows.
少子寿命检测仪面板如下。 - All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。 - The minority carrier lifetime(τ) in the base region of a solar cell is one of the most important parameters that affects the conversion efficiency of the device.
太阳电池基区的少数载流子寿命是影响电池效率的重要因素之一。 - Influence of Carrier Lifetime on Silicon-Based Optoelectronics Devices
载流子寿命对Si基光电子器件性能的影响 - The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.
对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。 - The results show that the SOA carrier lifetime is the main factor that produces converted waveform distortion.
结果表明，半导体光放大器的载流子寿命是导致输出波形畸变的主要因素。 - Minority Carrier Lifetime Control by Electron Irradiation for Power Switching Transistors
应用电子辐照技术控制功率开关晶体管少子寿命的研究 - The effects of the minority carrier lifetime in the base, the base width and the emitter doping concentration on SEB susceptibility are verified.
得到了SEB灵敏度与载流子浓度、基区宽度和发射结掺杂浓度等参数的变化关系。提出了改善SEB的几种加固措施。 - A method for measuring the minority carrier lifetime in silicon carbide semiconductor by the injection electroluminescence at point contacts is presented. The principles involved and measuring equipment used are described.
本文介绍一种测量碳化硅半导体少数载流子寿命的方法，叙述有关的原理和测试设备，并就对测试结果有极大影响的谐振干扰、点接触的电学性质和电发光特性等问题进行了试验。 - The influences of the injection current and carrier lifetime of semiconductor optical amplifier ( SOA) on the switching window of ultrafast nonlinear interferometer ( UNI) were studied by proceeding simulation and experiment.
对影响超快非线性干涉仪（UNI）开关窗口的半导体光放大器（SOA）的注入电流及载流子寿命进行了数值模拟实验研究。 - This paper presents some preliminary results on the measurement of carrier lifetime of GaAs diodes by the step recovery method.
本文报告了我们用阶跃恢复法测定砷化镓两极管载流子寿命的初步结果。首先，对硅阶跃两极管用反向恢复法和阶跃恢复法两种方法测寿命，经比较结果，数据相当符合。 - And the decay rate of these deviations depends on not only the carrier lifetime but also the photon lifetime, which is different from that of an ordinary diode laser experiencing turn-on process.
该衰减率不仅与载流子寿命有关，还和光子寿命有关，这一点与普通半导体激光器接通时的动态行为有所区别。 - Improvement of high frequency photoconductive decay technique for measuring silicon minority carrier lifetime is described.
本文介绍高频光电导衰减法硅单晶少子寿命测试技术的改进。 - Study on measuring system for minority carrier lifetime
少数载流子寿命测试系统研究 - Simultaneous Determination of Minority Carrier Lifetime and Surface Generation Velocity Using a MOS C-V Technique
用MOSC-V技术同时确定体产生寿命和表面产生速度 - The paper describes that the processing method using constant carrier lifetime approximation in investigating the dynamic process of amplifying light pulse with semiconductor light amplifier is unreasonable.
阐明了在研究半导体光放大器对光脉冲放大这一动态过程中通常采用常数载流子寿命近似这一处理方法是不合理的。 - Investigated are the relationship of the photocurrent versus illumination, voltage and distance between electrodes and photocurrent frequency characteristics of the film resistors. The calculated carrier lifetime is about 29 ms.
研究了薄膜电阻器的光电流与照度、电压和电极间距的关系以及薄膜在调制光下的频率特性，计算出薄膜中载流子寿命约为29ms。 - Determining minority carrier lifetime and surface generation velocity of a MOS structure by I-T and Q-T measurements
It和Qt法测量MOS结构少子寿命和表面产生速度 - Infrared high frequency photoconductive decay method is suited for measuring silicon minority carrier lifetime;
红外高频光电导衰减法测试硅单晶少数载流子寿命是优越的方法； - In order to increase the minority carrier lifetime, the mechanism of phosphorus gettering is studied.
研究了为提高基区少子寿命而进行磷吸收的机理。 - The influence of the constant carrier lifetime assumption on analysis of the characteristic in the semiconductor optical chaotic system
常数载流子寿命近似对分析半导体光混沌系统工作特性的影响 - Minority carrier lifetime is an important parameter for PIN diodes.
少子寿命是PIN二极管的重要参数。 - Measurement of carrier lifetime of GaAs diodes with p-n and M-S junctions by step recovery method
用阶跃恢复法测定砷化镓结型（p-n和M-S结）两极管的载流子寿命 - Through considering the practical composite mechanism of carrier in amplifier, the time domain distribution of the pulse after the pulse data stream passing through the amplifier is simulated by a numerical method and is compared with the results obtained with constant carrier lifetime approximation.
通过考虑放大器中载流子的实际复合机制，数值模拟了脉冲数据流通过放大器后脉冲的时域分布，并与采用常数载流子寿命近似所得的结果进行了比较。 - Taking account of carrier lifetime, carrier mobility, carrier diffusion length and its on stage voltage drop, then the optimization design of doping concentration and the width of n base region required in different withstand voltage can be getted.
同时对器件的N基区设计则综合考虑了耐压、载流子寿命、迁移率、载流子的扩散长度和通态压降等，得到了RSD在不同耐压需求下的掺杂浓度和主要阻断区域的优化设计。 - Control technology of minority carrier lifetime can effectively reduce the switching time and the peak reverse current of 4H-SiC PiN diode, and improve switch characteristics of device.
少子寿命控制技术可以有效减小4H-SiCPiN二极管开关时间与反向峰值电流，改善器件的开关特性。 - The fast neutron irradiation silicon crystals produced radiation damage-defect groups. The most important influence of radiation damage to semiconductor material is the removal effects of carrier and minority carrier lifetime reduction.
由于快中子辐照硅晶体产生辐照损伤–缺陷团对半导体材料的影响最重要的是载流子的去除效应和对少数载流子寿命。